Channel Type:
N, P
Maximum Continuous Drain Current:
2.6 A, 3.8 A
Maximum Drain Source Voltage:
20 V
Package Type:
MicroFET Thin
Series:
PowerTrench
Mounting Type:
Surface Mount
Pin Count:
6
Maximum Drain Source Resistance:
160 mΩ, 530 mΩ
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
0.4V
Maximum Power Dissipation:
1.4 W
Transistor Configuration:
Isolated
Maximum Gate Source Voltage:
-8 V, +8 V
Width:
1.6mm
Typical Gate Charge @ Vgs:
3 nC @ 4.5 V, 5.5 nC @ 4.5 V
Transistor Material:
Si
Maximum Operating Temperature:
+150 °C
Number of Elements per Chip:
2
Length:
1.6mm
Minimum Operating Temperature:
-55 °C
Height:
0.5mm
