Channel Type:
N, P
Maximum Continuous Drain Current:
1.4 A, 1.8 A
Maximum Drain Source Voltage:
60 V
Package Type:
SOIC
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
350 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
3V
Maximum Power Dissipation:
1.36 W
Transistor Configuration:
Full Bridge
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Operating Temperature:
+150 °C
Length:
5mm
Typical Gate Charge @ Vgs:
3.2 nC @ 10 V, 5.1 nC @ 10 V
Width:
4mm
Transistor Material:
Si
Number of Elements per Chip:
4
Height:
1.5mm
Minimum Operating Temperature:
-55 °C
