Vishay N-Channel MOSFET, 52 A, 60 V, 8-Pin PowerPAK 1212-8 SIS862ADN-T1-GE3

Vishay N-Channel MOSFET, 52 A, 60 V, 8-Pin PowerPAK 1212-8 SIS862ADN-T1-GE3

Manufacturer:
Manufacturer Part No:
SIS862ADN-T1-GE3
Enrgtech Part No:
ET100031275
Warranty:
Manufacturer
SAR 0.32 SAR 0.32
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Channel Type:
N
Maximum Continuous Drain Current:
52 A
Maximum Drain Source Voltage:
60 V
Package Type:
PowerPAK 1212-8
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
11 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
2.5V
Minimum Gate Threshold Voltage:
1V
Maximum Power Dissipation:
39 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
±20 V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
19.8 nC @ 10 V
Length:
3.15mm
Width:
3.15mm
Number of Elements per Chip:
1
Forward Diode Voltage:
1.1V
Height:
1.07mm
Minimum Operating Temperature:
-55 °C
Mount Type:
Surface
Product Type:
Diode
Package Type:
TO-277
Maximum Continuous Forward Current If:
8A
Peak Reverse Repetitive Voltage Vrrm:
60V
Series:
V8PX
Diode Configuration:
Single
Rectifier Type:
Schottky
Pin Count:
3
Peak Reverse Current Ir:
14mA
Maximum Forward Voltage Vf:
0.64V
Peak Non-Repetitive Forward Surge Current Ifsm:
140A
Minimum Operating Temperature:
-40°C
Maximum Operating Temperature:
175°C
Height:
1.2mm
Width:
4.75 mm
Length:
6.65mm
Standards/Approvals:
RoHS
Automotive Standard:
AEC-Q101
pdf icon
0900766b8170a2b1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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