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siss73dn-t1-ge3 Vishay P-Channel MOSFET, 16.2 A, 150 V, 8-Pin PowerPAK 1212-8S SISS73DN-T1-GE3
siss73dn-t1-ge3 Vishay P-Channel MOSFET, 16.2 A, 150 V, 8-Pin PowerPAK 1212-8S SISS73DN-T1-GE3

Vishay P-Channel MOSFET, 16.2 A, 150 V, 8-Pin PowerPAK 1212-8S SISS73DN-T1-GE3

Vishay P-Channel MOSFET, 16.2 A, 150 V, 8-Pin PowerPAK 1212-8S SISS73DN-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SISS73DN-T1-GE3
Enrgtech Part No:
ET100031274
Warranty:
Manufacturer
SAR 2.00
Checking for live stock
Channel Type:
P
Maximum Continuous Drain Current:
16.2 A
Maximum Drain Source Voltage:
150 V
Package Type:
PowerPAK 1212-8S
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
125 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Minimum Gate Threshold Voltage:
2V
Maximum Power Dissipation:
65.8 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
±20 V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
14.6 nC @ 10 V
Length:
3.3mm
Width:
3.3mm
Number of Elements per Chip:
1
Height:
0.78mm
Forward Diode Voltage:
1.2V
Minimum Operating Temperature:
-55 °C
pdf icon
0900766b8170a2d4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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