Infineon HEXFET Type P-Channel MOSFET, 18 A, 55 V Enhancement, 3-Pin TO-252 IRFR5505TRPBF

Infineon HEXFET Type P-Channel MOSFET, 18 A, 55 V Enhancement, 3-Pin TO-252 IRFR5505TRPBF

Manufacturer:
Manufacturer Part No:
IRFR5505TRPBF
Enrgtech Part No:
ET100030325
Warranty:
Manufacturer
SAR 0.44 SAR 0.44
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Product Type:
MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
18A
Maximum Drain Source Voltage Vds:
55V
Package Type:
TO-252
Series:
HEXFET
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
110mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
57W
Typical Gate Charge Qg @ Vgs:
32nC
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
-1.6V
Maximum Operating Temperature:
150°C
Length:
6.73mm
Standards/Approvals:
No
Height:
2.39mm
Width:
6.22 mm
Automotive Standard:
No
Distrelec Product Id:
304-44-466
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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