ROHM Type N-Channel MOSFET, 3 A, 800 V Enhancement, 3-Pin TO-220FM R8003KNXC7G

ROHM Type N-Channel MOSFET, 3 A, 800 V Enhancement, 3-Pin TO-220FM R8003KNXC7G

Manufacturer:
Manufacturer Part No:
R8003KNXC7G
Enrgtech Part No:
ET100027934
Warranty:
Manufacturer
SAR 1.46 SAR 1.46
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
3A
Maximum Drain Source Voltage Vds:
800V
Package Type:
TO-220FM
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
1.8Ω
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
11.5nC
Maximum Power Dissipation Pd:
36W
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Height:
29.87mm
Width:
5 mm
Length:
10.3mm
Automotive Standard:
No
pdf icon
A700000008359617.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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