ROHM Type N-Channel MOSFET, 7 A, 650 V Enhancement, 3-Pin TO-252 R6507KND3TL1

ROHM Type N-Channel MOSFET, 7 A, 650 V Enhancement, 3-Pin TO-252 R6507KND3TL1

Manufacturer:
Manufacturer Part No:
R6507KND3TL1
Enrgtech Part No:
ET100027417
Warranty:
Manufacturer
SAR 1.79 SAR 1.79
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
7A
Maximum Drain Source Voltage Vds:
650V
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
665mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
78W
Typical Gate Charge Qg @ Vgs:
20nC
Maximum Operating Temperature:
150°C
Width:
2.4 mm
Length:
6.4mm
Standards/Approvals:
No
Height:
10.4mm
Automotive Standard:
No
pdf icon
A700000008359769.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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