Infineon OptiMOS™ Type N-Channel MOSFET, 381 A, 40 V Enhancement, 8-Pin TDSON BSC0901NSATMA1

Infineon OptiMOS™ Type N-Channel MOSFET, 381 A, 40 V Enhancement, 8-Pin TDSON BSC0901NSATMA1

Manufacturer:
Manufacturer Part No:
BSC0901NSATMA1
Enrgtech Part No:
ET100026069
Warranty:
Manufacturer
SAR 0.86 SAR 0.86
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
381A
Maximum Drain Source Voltage Vds:
40V
Package Type:
TDSON
Series:
OptiMOS™
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
0.7mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
81W
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
80nC
Forward Voltage Vf:
1V
Maximum Operating Temperature:
150°C
Width:
6.35 mm
Height:
1.1mm
Length:
5.35mm
Standards/Approvals:
RoHS
Automotive Standard:
No
pdf icon
0900766b815790ef.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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