Infineon HEXFET Type N-Channel MOSFET, 32 A, 100 V Enhancement, 3-Pin TO-252 IRFR3411TRPBF

Infineon HEXFET Type N-Channel MOSFET, 32 A, 100 V Enhancement, 3-Pin TO-252 IRFR3411TRPBF

Manufacturer:
Manufacturer Part No:
IRFR3411TRPBF
Enrgtech Part No:
ET10001596
Warranty:
Manufacturer
SAR 0.78 SAR 0.78
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
32A
Maximum Drain Source Voltage Vds:
100V
Series:
HEXFET
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
44mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
380mV
Typical Gate Charge Qg @ Vgs:
3.65kΩ
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
175°C
Height:
2.39mm
Width:
7.49 mm
Length:
6.73mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b814a38a5.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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