Infineon HEXFET Type N-Channel MOSFET, 127 A, 100 V Enhancement, 3-Pin TO-263 IRFS4310ZTRLPBF

Infineon HEXFET Type N-Channel MOSFET, 127 A, 100 V Enhancement, 3-Pin TO-263 IRFS4310ZTRLPBF

Manufacturer:
Manufacturer Part No:
IRFS4310ZTRLPBF
Enrgtech Part No:
ET10001563
Warranty:
Manufacturer
SAR 2.11 SAR 2.11
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
127A
Maximum Drain Source Voltage Vds:
100V
Package Type:
TO-263
Series:
HEXFET
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
6mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
120nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
250W
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Height:
4.83mm
Width:
11.3 mm
Standards/Approvals:
No
Length:
10.67mm
Automotive Standard:
AEC-Q101
pdf icon
0900766b814a38b4.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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