onsemi MJD122G NPN Darlington Transistor, 8 A 100 V HFE:100, 3-Pin DPAK

onsemi MJD122G NPN Darlington Transistor, 8 A 100 V HFE:100, 3-Pin DPAK

Manufacturer:
Manufacturer Part No:
MJD122G
Enrgtech Part No:
ET101016863
Warranty:
Manufacturer
SAR 0.85 SAR 0.85
Checking for live stock
Transistor Type:
NPN
Maximum Continuous Collector Current:
8 A
Maximum Collector Emitter Voltage:
100 V
Maximum Emitter Base Voltage:
5 V
Package Type:
DPAK (TO-252)
Mounting Type:
Surface Mount
Pin Count:
3
Transistor Configuration:
Single
Number of Elements per Chip:
1
Minimum DC Current Gain:
100
Maximum Base Emitter Saturation Voltage:
4.5 V
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Saturation Voltage:
4 V
Maximum Collector Cut-off Current:
0.01mA
Width:
330µF
Dimensions:
6.73 x 6.22 x 2.38mm
Height:
2.38mm
Length:
6.73mm
Maximum Operating Temperature:
+150 °C
Minimum Operating Temperature:
-65 °C
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0900766b80dc5489.pdf(datasheets)
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0900766b81644fae.pdf(datasheets)
Explore Darlington pairs for high-gain switching needs. Enrgtech offers power transistors ideal for amplifiers, controllers, and voltage regulation circuits.



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