onsemi MJ11012G Dual NPN Darlington Transistor, 30 A 60 V HFE:200, 2-Pin TO-204AA

For more information please check the datasheets.

onsemi MJ11012G Dual NPN Darlington Transistor, 30 A 60 V HFE:200, 2-Pin TO-204AA

Manufacturer:

onsemi

Manufacturer Part No:

MJ11012G

Enrgtech Part No:

ET100490913

Warranty:

Manufacturer

SAR 6.05

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Transistor Type:

NPN

Maximum Continuous Collector Current:

30 A

Maximum Collector Emitter Voltage:

60 V

Maximum Emitter Base Voltage:

5 V

Package Type:

TO-204AA

Mounting Type:

Through Hole

Pin Count:

Transistor Configuration:

Single

Number of Elements per Chip:

Minimum DC Current Gain:

200

Maximum Base Emitter Saturation Voltage:

5 V

Maximum Collector Base Voltage:

60 V

0900766b813a4612.pdf(datasheets)

0900766b81644fae.pdf(datasheets)

Explore Darlington pairs for high-gain switching needs. Enrgtech offers power transistors ideal for amplifiers, controllers, and voltage regulation circuits.

onsemi MJ11012G Dual NPN Darlington Transistor, 30 A 60 V HFE:200, 2-Pin TO-204AA

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