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mjd112-1g onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)
mjd112-1g onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

Manufacturer:
onsemi
Manufacturer Part No:
MJD112-1G
Enrgtech Part No:
ET100402917
Warranty:
Manufacturer
SAR 1.30 SAR 1.30
Checking for live stock
Transistor Type:
NPN
Maximum Continuous Collector Current:
2 A
Maximum Collector Emitter Voltage:
100 V
Maximum Emitter Base Voltage:
5 V
Package Type:
IPAK (TO-251)
Mounting Type:
Through Hole
Pin Count:
3
Transistor Configuration:
Single
Number of Elements per Chip:
1
Minimum DC Current Gain:
1000
Maximum Base Emitter Saturation Voltage:
4 V
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Saturation Voltage:
3 V
Maximum Collector Cut-off Current:
TiltWatch XTR
Minimum Operating Temperature:
-65 °C
Maximum Power Dissipation:
20 W
Width:
2.38mm
Height:
6.35mm
Length:
6.73mm
Maximum Operating Temperature:
+150 °C
Dimensions:
6.73 x 2.38 x 6.35mm
pdf icon
0900766b81574ccb.pdf(datasheets)
pdf icon
0900766b81644fae.pdf(datasheets)
Explore Darlington pairs for high-gain switching needs. Enrgtech offers power transistors ideal for amplifiers, controllers, and voltage regulation circuits.
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