Infineon BFR193WH6327XTSA1 NPN RF Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-323

Infineon BFR193WH6327XTSA1 NPN RF Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-323

Manufacturer:
Manufacturer Part No:
BFR193WH6327XTSA1
Enrgtech Part No:
ET100184776
Warranty:
Manufacturer
SAR 0.08 SAR 0.08
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Transistor Type:
NPN
Maximum DC Collector Current:
80 mA
Maximum Collector Emitter Voltage:
12 V
Package Type:
HEXFET
Mounting Type:
Surface Mount
Maximum Power Dissipation:
580 mW
Transistor Configuration:
Single
Maximum Collector Base Voltage:
20 V
Maximum Emitter Base Voltage:
2 V
Maximum Operating Frequency:
8 GHz
Pin Count:
3
Number of Elements per Chip:
1
Dimensions:
2 x 1.25 x 0.8mm
Maximum Operating Temperature:
+150 °C
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0900766b8132f016.pdf(datasheets)
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0900766b81644fa7.pdf(datasheets)



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